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APPLICATION OF DIFFERENTIAL REFLECTANCE OPTIC FOR DETERMINATION OF DAMAGE INDUCED BY ION IMPLANTATION ON GAAS

Imam Rofi'i

Jurusan Fisika FMIPA Universitas Jember, Jl. Kalimantan III/25, Kampus Tegalboto, Jember 68121, Indonesia

Abstract
This research aimed to demonstrate the effectiveness of differential reflectance optic in determining damage induced by ion implantation on GaAs. Samples used in this work were semi-insulating GaAs crystals grown by liquid encapsulated Czochralski method. There are two groups of samples, one group was implanted with 400 keV Ge ions and other group was implanted with 25 keV Ar ions. For Ge ions, the ion implantation were performed with six different doses of Ge ions, namely: 3 x 1013, 1 x 1013, 3 x 1012, 1 x 1012, 3 x 1011, and 1 x 1011 ions/cm2, while argon implantation was performed at 4 x 1013 ion/cm2. The results indicated that DR spectra were monotonically effected by ion dose of implantation.

Publication : Physics Journal IPS Proceeding Supplement A6 (2002) 0517
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Additional info : 5 pages, language English