Physics Journal of the Indonesian Physical Society
THE INFRARED ABSORPTION STRENGTH OF SI-H STRETCHING AND WAGGING MODES OF THE AMORPHOUS SILICON CARBON (A-SIC:H)
Rosari Saleh1 , Lusitra Munisa2 and Wolfhard Beyer3
1 Jurusan Fisika, FMIPA Universitas Indonesia, Depok 16424 Indonesia
2 Program Studi Ilmu Fisika, Program Pascasarjana UI, Jakarta 10430 Indonesia
3 Institut für Photovoltaik (IPV), Forschungszentrum Jülich, D-52425 Germany
Infrared absorption data of amorphous silicon carbon (a-SiC:H) films were analysed to obtain ratios of absorption strengths A of the Si-H stretching and wagging modes. The films were deposited by DC sputtering methods using silicon target in the argon and methane gas mixture. The hydrogen effusion measurements were used to obtain the absolute values of A. The results suggest essentially equal absorption strengths for the two Si-H stretching modes at 2000 and 2100 cm-1. The ratio of stretching and wagging absorption strength is essentially independent of hydrogen bonded to silicon. The absolute values of the Si-H stretching and wagging absorption strengths are independent of the methane flow rate.