Physics Journal of the Indonesian Physical Society
VOLTAGE RESPONSIVITY OF TANTALUM OXIDE DOPED LEAD ZIRCONIUM TITANATE (PTZT) THIN FILMS AND ITS APPLICATION FOR IR SENSOR
Irzaman1,4, Y. Darvina2,4, A. Fuad3,4, P. Arifin4, M. Budiman4, M. Barmawi4
1Department of Physics, FMIPA IPB, Jl. Raya Pajajaran Bogor 16144, Indonesia
2Department of Physics, FPMIPA Universitas Negeri Padang, Jl. Dr. Hamka Air Tawar, Padang, Indonesia
3Department of Physics, FMIPA Universitas Negeri Malang, Malang 65145, Indonesia
4Department of Physics, FMIPA ITB, Jl. Ganeca 10, Bandung 40132, Indonesia
Tantalum oxide (Ta2O5) doped lead zirconium titanate (PbZr0.525Ti0.475O,sub>3) thin films were gown on Pt (200)/Si (100) substrates by DC unbalanced magnetron Sputtering (DC-UBMS) method. The microstructure and crystallinity of thin films were analyzed by X-ray diffraction. The XRD spectra showed that films were polycrystalline with preferred orientation in (100) and (111). Voltage responsivity and pyroelectric properties were measured by lock-in technique. The voltage responsivity properties was``1879 - 2678 V/W and the pyroelectric coefficient (p) was 8.2 x 10-4 - 8.5 x 10-4 C/m2K at chopper frequency of 2000 Hz and at infrared wavelength of 947 nm. These results showed that PTZT thin films was suitable for use as a pyroelectric IR sensor.