VOLTAGE RESPONSIVITY OF TANTALUM OXIDE DOPED LEAD ZIRCONIUM TITANATE (PTZT) THIN FILMS AND ITS APPLICATION FOR IR SENSOR

Irzaman^1,4, Y. Darvina^2,4, A. Fuad^3,4, P. Arifin⁴, M. Budiman⁴, M. Barmawi⁴

¹Department of Physics, FMIPA IPB, Jl. Raya Pajajaran Bogor 16144, Indonesia
²Department of Physics, FPMIPA Universitas Negeri Padang, Jl. Dr. Hamka Air Tawar, Padang, Indonesia
³Department of Physics, FMIPA Universitas Negeri Malang, Malang 65145, Indonesia
⁴Department of Physics, FMIPA ITB, Jl. Ganeca 10, Bandung 40132, Indonesia

Abstract
Tantalum oxide (Ta₂O₅) doped lead zirconium titanate (PbZr_0.525Ti_0.475O,sub>3) thin films were gown on Pt (200)/Si (100) substrates by DC unbalanced magnetron Sputtering (DC-UBMS) method. The microstructure and crystallinity of thin films were analyzed by X-ray diffraction. The XRD spectra showed that films were polycrystalline with preferred orientation in (100) and (111). Voltage responsivity and pyroelectric properties were measured by lock-in technique. The voltage responsivity properties was``1879 - 2678 V/W and the pyroelectric coefficient (p) was 8.2 x 10^-4 - 8.5 x 10^-4 C/m²K at chopper frequency of 2000 Hz and at infrared wavelength of 947 nm. These results showed that PTZT thin films was suitable for use as a pyroelectric IR sensor.

Publication : Physics Journal IPS Proceeding Supplement A6 (2002) 0532 » page of Content » send to a friend » printed version » request for hard-copy Full paper : closed license in format PDF (request for hard-copy) Contact : author(s) Additional info : 4 pages, language English » accessed 12.245 times