Physics Journal of the Indonesian Physical Society
THE NATURE OF HYDROGEN BOUND TO SILICON AND CARBON IN HYDROGENATED AMORPHOUS SILICON CARBON (A-SIC:H) FILMS GROWN BY DC SPUTTERING METHODS
Rosari Saleh and Lusitra Munisa
Departemen Fisika, FMIPA, Universitas Indonesia, Depok 16424
Infrared absorption, hydrogen effusion and compositional measurements have been performed to a series of amorphous silicon carbon (a-SiC:H) films deposited by dc sputtering method using silicon target in an argon-methane gas mixture. The experimental data show that roughly one hydrogen atom is incorporated for one carbon atom and hydrogen is predominantly bound to silicon. These experimental results can be used to predict the chemical reaction of the feeding gases in our dc-sputtered system.